SKKT 162, SKKH 162
SEMIPACK® 2
Thyristor / Diode Modules

SKKT 162

SKKH 162

Features

  • Heat transfer through aluminium oxide ceramic isolated metal baseplate
  • Hard soldered joints for high reliability
  • UL recognized, file no. E 63 532

Typical Applications

  • DC motor control
    (e. g. for machine tools)
  • Temperature control
    (e. g. for ovens, chemical processes)
  • Professional light dimming
    (studios, theaters)
1) See the assembly instructions
SKKTSKKH
VRSMVRRM, VDRMITRMS = 250 A (maximum value for continuous operation)
VVITAV = 160 A (sin.180; Tc = 83 °C)
900 800 SKKT 162/08E SKKH 162/08E  
1300 1200 SKKT 162/12E SKKH 162/12E  
1500 1400 SKKT 162/14E SKKH 162/14E  
1700 1600 SKKT 162/16E SKKH 162/16E  
1900 1800 SKKT 162/18E SKKH 162/18E  
SymbolConditionsValuesUnits
ITAVsin. 180; Tc = 85 (100) °C; 156 ( 110 ) A
IDP3/180F; Ta = 35 °C; B2 / B6190 / 230A
IRMSP3/180F; Ta = 35 °C; W1 / W3265 / 3 * 185A
ITSMTvj = 25 °C; 10 ms 5400A
Tvj = 125 °C; 10 ms 5000A
i²tTvj = 25 °C; 8,3 ... 10 ms 145000A²s
Tvj = 125 °C; 8,3 ... 10 ms 125000A²s
VTTvj = 25 °C; IT = 500 Amax. 1,6V
VT(TO)Tvj = 125 °C max. 0,85V
rTTvj = 125 °C max. 1,5mΩ
IDD; IRDTvj = 125 °C; VRD = VRRM; VDD = VDRMmax. 40mA
tgdTvj = 25 °C; IG = 1 A; diG/dt = 1 A/µs1µs
tgrVD = 0,67 * VDRM2µs
(di/dt)crTvj = 125 °C max. 200A/µs
(dv/dt)crTvj = 125 °C max. 1000V/µs
tqTvj = 125 °C ,50 ... 150µs
IHTvj = 25 °C; typ. / max.150 / 400mA
ILTvj = 25 °C; RG = 33 Ω; typ. / max.300 / 1000mA
VGTTvj = 25 °C; d.c.min. 2V
IGTTvj = 25 °C; d.c.min. 150mA
VGDTvj = 125 °C; d.c.max. 0,25V
IGDTvj = 125 °C; d.c.max. 10mA
Rth(j-c)cont.; per thyristor / per module0,17 / 0,085K/W
Rth(j-c)sin. 180; per thyristor / per module0,18 / 0,09K/W
Rth(j-c)rec. 120; per thyristor / per module0,2 / 0,1K/W
Rth(c-s)per thyristor / per module0,1 / 0,05K/W
Tvj- 40 ... + 125°C
Tstg- 40 ... + 125°C
Visola. c. 50 Hz; r.m.s.; 1 s / 1 min.3600 / 3000V~
Msto heatsink5 ± 15 %1)Nm
Mtto terminal5 ± 15 %Nm
a5 * 9,81m/s²
mapprox.165g
CaseSKKTA 21
SKKHA 22

Diagrams

Fig. 1L Power dissipation per thyristor vs. on-state current
Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2L Power dissipation per module vs. rms current
Fig. 2R Power dissipation per module vs. case temp.
Fig. 3L Power dissipation of two modules vs. direct current
Fig. 3R Power dissipation of two modules vs. case temp.
Fig. 4L Power dissipation of three modules vs. direct and rms current
Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease
Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics
Fig. 8 Surge overload current vs. time
Fig. 9 Gate trigger characteristics

Cases / Circuits

Dimensions in mm
Case A 21 (SKKT)
Case A 22SKKH

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.