SKM 200GB173D
SEMITRANS® 3
IGBT Modules

SKM 200GB173D

SKM 200GB173D1

SKM 200GAL173D

SKM 200GAR173D

Features

  • MOS input (voltage controlled)
  • N channel , Homogeneous Si
  • Low inductance case
  • Very low tail current with low temperature dependence
  • High short circuit capability, self limiting to 6 x Icnom
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology
  • Large clearance (13 mm) and creepage distance (20 mm)

Typical Applications

  • AC inverter drives on mains 575 - 750 VAC
  • DC bus voltage 750 - 1200 VDC
  • Public transport (auxiliary syst.)
  • Switching (not for linear use)
    GBGALGAR
    Absolute Maximum RatingsTc = 25 °C, unless otherwise specified
    SymbolConditionsValuesUnits
    IGBT
    VCESTj = 25 °C 1700V
    ICTj = 150 °CTcase = 25 °C220 A
    Tcase = 80 °C150 A
    ICRMICRM=2xICnom300A
    VGES± 20V
    tpscVCC = 1200 V; VGE ≤ 20 V; VCES < 1700 V Tj = 125 °C 10µs
    Inverse Diode
    IFTj = 150 °CTcase = 25 °C150 A
    Tcase = 80 °C100 A
    IFRMIFRM=2xIFnom300A
    IFSMtp = 10 ms; sin.Tj = 150 °C 1450A
    Freewheeling Diode
    IFTj = 150 °CTcase = 25 °C230 A
    Tcase = 80 °C150 A
    IFRMIFRM=2xIFnom400A
    IFSMtp = 10 ms; sinTj = 150 °C 2200A
    Module
    It(RMS)500A
    Tvj- 40 ... + 150°C
    Tstg- 40 ... + 125°C
    VisolAC, 1 min.4000V
    CharacteristicsTc = 25 °C, unless otherwise specified
    SymbolConditionsmin.typ.max.Units
    IGBT
    VGE(th)VGE = VCE, IC = 10 mA4,85,56,2V
    ICESVGE = 0 V, VCE = VCESTj = 25 °C 0,10,3mA
    VCE0Tj = 25 °C1,651,9V
    Tj = 125 °C1,92,15V
    rCEVGE = 15 VTj = 25°C11,713,3mΩ
    Tj = 125°C17,319mΩ
    VCE(sat)ICnom = 150 A, VGE = 15 V Tj = 25°Cchiplev.3,43,9V
    Tj = 125°Cchiplev.4,55V
    Cies20nF
    CoesVCE = 25, VGE = 0 Vf = 1 MHz 2nF
    Cres0,55nF
    QGVGE=0V/+20V2000nC
    td(on)580ns
    trRGon = 4 ΩVCC = 1200V 100ns
    EonICnom= 150A 95mJ
    td(off) RGoff = 4 Ω Tj = 125 °C 750ns
    tfVGE = ± 15V40ns
    Eoff45mJ
    Rth(j-c) per IGBT 0,1K/W
    Characteristics
    SymbolConditionsmin.typ.max.Units
    Inverse Diode
    VF = VECIFnom = 150 A; VGE = 0 V Tj = 25 °Cchiplev.2,22,7V
    Tj = 125 °Cchiplev.1,9V
    VF0Tj = 125 °C 1,31,5V
    rFTj = 125 °C 4,56,2mΩ
    IRRMIFnom = 150 ATj = 125 °C85A
    Qrr di/dt = 1000 A/µs38µC
    ErrVGE = -15 V; VCC = 1200 VmJ
    Rth(j-c)D per diode 0,32K/W
    FWD
    VF = VECIFnom = 150 A; VGE = 0 V Tj = 25 °Cchiplev.22,4V
    Tj = 125 °Cchiplev.1,8V
    VF0Tj = 125 °C 1,31,5V
    rFTj = 125 °C 3,54,5V
    IRRMIFnom = 150 ATj = 125 °C110A
    Qrr50µC
    ErrVGE = -15 V; VCC = 1200 VmJ
    Rth(j-c)FD per diode 0,21K/W
    Module
    LCE1520nH
    RCC'+EE'res., terminal-chipTcase = 25 °C0,35mΩ
    Tcase = 125 °C0,5mΩ
    Rth(c-s)per module0,038K/W
    Msto heat sink M6 3 5 Nm
    w325g
    Zth
    SymbolConditionsValuesUnits
    Zth(j-c)l
    Rii = 1 72mk/W
    Rii = 2 19mk/W
    Rii = 3 6,9mk/W
    Rii = 4 2,1mk/W
    tauii = 1 0,0946s
    tauii = 2 0,011s
    tauii = 3 0,0011s
    tauii = 4 0s
    Zth(j-c)D
    Rii = 1 230mk/W
    Rii = 2 70mk/W
    Rii = 3 17mk/W
    Rii = 4 3mk/W
    tauii = 1 0,0839s
    tauii = 2 0,0069s
    tauii = 3 0,0028s
    tauii = 4 0,0002s

    Diagrams

    Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
    Fig. 2 Rated current vs. temperature IC = f (TC)
    Fig. 3 Typ. turn-on /-off energy = f (IC)
    Fig. 4 Typ. turn-on /-off energy = f (RG)
    Fig. 5 Typ. transfer characteristic
    Fig. 6 Typ. gate charge characteristic
    Fig. 7 Typ. switching times vs. IC
    Fig. 8 Typ. switching times vs. gate resistor RG
    Fig. 9 Transient thermal impedance
    Fig. 10 CAL diode forward characteristic
    Fig. 11 Typ. CAL diode peak reverse recovery current
    Fig. 12 Typ CAl diode recovered charge

    Cases / Circuits

    Case D 56
    GBCase D 56
    GALCase D 57 (➝ D 56)
    GARCase D 58 (➝ D 56)

    This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.

    This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.