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Application

Application

Index

0

Operation principle of power semiconductors

 

0.1

Basic switching processes

[ 1 ]

0.2

Operation principle of power semiconductors

[ 4 ]

0.3

Power electronic switches

[ 6 ]

1

Basics

 

1.1

Application fields and today’s application limits of IGBT and MOSFET power modules

[ 13 ]

1.2

Power MOSFET and IGBT

[ 14 ]

1.2.1

Different structures and functional principles

[ 14 ]

1.2.2

Static behaviour

[ 22 ]

1.2.2.1

Power-MOSFET

[ 23 ]

1.2.2.2

IGBT

[ 27 ]

1.2.3

Hard switching behaviour of MOSFETs and IGBTs

[ 29 ]

1.2.4

New developments in MOSFET and IGBT technology

[ 35 ]

1.3

Free-wheeling- and snubber-diodes

[ 39 ]

1.3.1

Demands to free-wheeling and snubber-diodes

[ 39 ]

1.3.1.1

Reverse voltage and forward voltage drop

[ 39 ]

1.3.1.2

Turn-on behaviour

[ 40 ]

1.3.1.3

Reverse recovery behaviour

[ 41 ]

1.3.1.4

Demands on free-wheeling diodes used in the rectifier and inverter mode of voltage source converters

[ 47 ]

1.3.2

Structure of fast power diodes

[ 50 ]

1.3.3

Characteristics of fast power diodes

[ 51 ]

1.3.3.1

Forward and blocking behaviour

[ 51 ]

1.3.3.2

Turn-on behaviour

[ 52 ]

1.3.3.3

Turn-off behaviour

[ 53 ]

1.3.3.4

Dynamic ruggedness

[ 54 ]

1.3.4

Modern diodes with optimized recovery behaviour

[ 55 ]

1.3.4.1

Emitter conception

[ 55 ]

1.3.4.2

Controlled Axial Lifetime (CAL) - conception

[ 57 ]

1.3.4.3

The concept of hybrid diodes

[ 59 ]

1.3.5

Series and parallel connection of fast power diodes

[ 61 ]

1.3.5.1

Series connection

[ 61 ]

1.3.5.2

Connection in parallel

[ 63 ]

1.4

Power modules: special features of multi-chip structures

[ 64 ]

1.4.1

Structure of power modules

[ 64 ]

1.4.2

Features of power modules

[ 67 ]

1.4.2.1

Complexity

[ 67 ]

1.4.2.2

Heat dissipation capability

[ 69 ]

1.4.2.3

Isolation voltage/ partial discharge stability [275]

[ 76 ]

1.4.2.4

Power cycling capability

[ 77 ]

1.4.2.5

Internal low-inductive structure

[ 80 ]

1.4.2.6

Internal structure-adapted to EMC

[ 81 ]

1.4.2.7

Defined safe behaviour in case of module failure

[ 82 ]

1.4.2.8

Non-polluting recycling

[ 82 ]

1.4.3

Assembly and connection technology: types of cases

[ 83 ]

1.4.4

SEMIKRON code designation system for SEMITRANS- and SEMITOP-power modules

[ 85 ]

1.5

Examples for new packaging technologies

[ 87 ]

1.5.1

SKiiPPACK

[ 88 ]

1.5.2

MiniSKiiP

[ 90 ]

1.5.3

SEMITOP

[ 93 ]

1.5.4

New low-inductive IGBT module constructions for high currents and voltages

[ 93 ]

1.6

Integration of sensors, protective functions, drivers and intelligence

[ 94 ]

2

Datasheet parameters for MOSFET, IGBT, MiniSKiiP- and SKiiPPACK modules

 

2.1

General

[ 97 ]

2.1.1

Letter symbols, terms, standards

[ 97 ]

2.1.2

Maximum ratings and characteristics

[ 99 ]

2.2

Power MOSFET modules [264], [265]

[ 99 ]

2.2.1

Maximum ratings

[ 99 ]

2.2.2

Characteristics

[ 101 ]

2.2.3

Diagrams

[ 106 ]

2.3

IGBT-modules [264], [265]

[ 110 ]

2.3.1

Maximum ratings

[ 110 ]

2.3.2

Characteristics

[ 111 ]

2.3.3

Diagrams

[ 119 ]

2.4

Special parameters for MiniSKiiPs

[ 126 ]

2.5

Special parameters for SKiiPPACKs

[ 127 ]

2.6

Temperature dependency of static and dynamic characteristics of power modules

[ 127 ]

2.7

Reliability

[ 130 ]

3

Hints for application

 

3.1

Dimensioning and selection of MOSFET, IGBT and SKiiPPACK modules

[ 133 ]

3.1.1

Forward blocking voltage

[ 133 ]

3.1.2

Forward current

[ 134 ]

3.1.3

Switching frequency

[ 135 ]

3.2

Thermal behaviour

[ 137 ]

3.2.1

Balance of power losses

[ 137 ]

3.2.1.1

Single and total power losses

[ 137 ]

3.2.1.2

Power losses of a step-down converter

[ 139 ]

3.2.1.3

Power losses in pulsed voltage source inverters/rectifiers with sinusoidal currents

[ 140 ]

3.2.2

Calculation of the junction temperature

[ 146 ]

3.2.2.1

General hints

[ 146 ]

3.2.2.2

Junction temperature during short-time operation

[ 148 ]

3.2.2.3

Junction temperature under pulse operation

[ 150 ]

3.2.2.4

Junction temperature at fundamental harmonics frequency

[ 152 ]

3.2.3

Evaluation of temperature characteristics with regards to module life

[ 154 ]

3.3

Cooling of power modules

[ 155 ]

3.3.1

Cooling devices, coolants and cooling methods

[ 155 ]

3.3.2

Thermal model of the cooling device

[ 156 ]

3.3.3

Natural air cooling (free convection)

[ 157 ]

3.3.4

Forced air cooling

[ 157 ]

3.3.5

Water cooling

[ 161 ]

3.3.6

Heatsink ratings for SKiiPPACKs on standard heatsinks

[ 162 ]

3.3.6.1

Forced air cooling

[ 162 ]

3.3.6.2

Liquid cooling

[ 164 ]

3.4

Power design

[ 165 ]

3.4.1

Parasitic inductances and capacitances

[ 165 ]

3.4.2

EMI/mains feedbacks

[ 168 ]

3.4.2.1

Processes in the converter

[ 168 ]

3.4.2.2

Causes of interference currents

[ 169 ]

3.4.2.3

Propagation paths

[ 170 ]

3.4.2.4

EMI suppression measures

[ 173 ]

3.4.3

Power units ready for installation

[ 174 ]

3.5

Driver

[ 178 ]

3.5.1

Gate voltage and gate current characteristics

[ 178 ]

3.5.2

Influence of driver parameters on switching features

[ 181 ]

3.5.3

Driver circuit structures and basic requirements on drivers

[ 184 ]

3.5.4

Integrated protection and monitoring functions of a driver

[ 187 ]

3.5.5

Time constants and interlock functions

[ 188 ]

3.5.6

Transmission of control signal and driving energy

[ 189 ]

3.5.6.1

Control data and feedback

[ 191 ]

3.5.6.2

Driving energy

[ 191 ]

3.5.7

Driver circuits for power MOSFETs and IGBTs

[ 192 ]

3.5.8

SEMIDRIVER

[ 192 ]

3.5.8.1

OEM-drivers [225], [264], [272]

[ 193 ]

3.5.8.2

SKiiPPACK-drivers [112], [264]

[ 195 ]

3.6

Fault behaviour and protection

[ 199 ]

3.6.1

Types of faults

[ 199 ]

3.6.2

Behaviour of IGBTs and MOSFETs during overload and short-circuit operation

[ 202 ]

3.6.3

Fault detection and protection

[ 208 ]

3.6.3.1

Detection and reduction of fault currents

[ 208 ]

3.6.3.2

Overvoltage limitation

[ 211 ]

3.6.3.3

Overtemperature detection

[ 217 ]

3.7

Parallel and series connection of MOSFET, IGBT and SKiiPPACK modules

[ 218 ]

3.7.1

Parallel connection

[ 218 ]

3.7.1

Parallel connection

[ 218 ]

3.7.1.1

Problems of current sharing

[ 218 ]

3.7.1.2

Module selection, driver circuit, layout

[ 221 ]

3.7.1.3

Parallel connection of SKiiPPACK modules

[ 223 ]

3.7.2

Series connection

[ 225 ]

3.7.2.1

Problems of voltage sharing

[ 225 ]

3.7.2.2

Module selection, driver circuit, snubber networks, layout

[ 226 ]

3.8

Soft switching in ZVS or ZCS-mode / switching loss reduction networks

[ 231 ]

3.8.1

Requirements and application fields

[ 231 ]

3.8.2

Switching loss reduction networks

[ 232 ]

3.8.3

Soft switching

[ 234 ]

3.8.3.1

Typical current and voltage characteristics / power semiconductor stress

[ 234 ]

3.8.3.2

Requirements on semiconductor switches and their drivers

[ 237 ]

3.8.3.3

Features of switches

[ 239 ]

3.8.3.4

Conclusions

[ 244 ]

3.9

Handling of MOSFET, IGBT, MiniSKiiP and SKiiPPACK modules

[ 245 ]

3.9.1

Sensitivity to ESD and measures for protection

[ 245 ]

3.9.2

Mounting instructions

[ 245 ]

3.9.3

SKiiPPACK: thermal testing ex works [ [265] ], [ [93] ], [ [233] ]

[ 246 ]

3.10

Dimensioning software

[ 246 ]

3.10.1

Model levels of mathematical circuit description

[ 246 ]

3.10.2

SEMIKRON software service

[ 250 ]

4

References

[ 253 ]

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