混合碳化硅功率模块
带IGBT和碳化硅肖特基二极管的功率模块
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SEMITRANS 3 (106x62x31)1200200Half BridgeSiC Diode + IGBT 4 (Trench)Sample status
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SEMITRANS 3 (106x62x31)1200200Half BridgeSiC Diode + IGBT 4 fast (Trench)Sample status
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SEMITRANS 3 (106x62x31)1200200Half BridgeSiC Diode + IGBT 4 fast (Trench)Sample status
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SKIM 93 (160x150x35)1200450Six PackSiC Diode + IGBT 4 fast (Trench)
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SEMiX 3p (150x62x17)1200600Half BridgeSiC Diode + IGBT 4 (Trench)Sample status
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MiniSKiiP II 2 (59x52x16)120050Six PackSiC Diode + IGBT 4 fast (Trench)Sample status
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MiniSKiiP II 3 (82x59x16)1200100Six PackSiC Diode + IGBT 4 fast (Trench)Sample status
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MiniSKiiP II 3 (82x59x16)1200150Six PackSiC Diode + IGBT 4 fast (Trench)Sample status
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MiniSKiiP II 3 (82x59x16)1200300Half BridgeIGBT 4 Fast (Trench)Sample status
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MiniSKiiP II 3 (82x59x16)1200400Customer SpecificIGBT 4 Fast (Trench)Sample status
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MiniSKiiP II 3 (82x59x16)1200400Customer SpecificIGBT 4 Fast (Trench)Sample status
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高开关频率并且和提高了输出功率和效率
赛米控提供混合碳化硅功率模块如，MiniSKiiP, SEMITRANS, SEMiX 3 Press-Fit和SKiM63/93。将最新的IGBT技术和由领先供应商所提供的SiC（碳化硅）肖特基二极管结合在一起，以提高开关频率，同时减少功率损耗。
可提供的混合碳化硅功率模块电流为50A - 600A,电压为 1200V。涵盖三相全桥和半桥拓扑结构。
SiC（碳化硅）肖特基续流二极管所带来的开关损耗近乎为零, 同时能大大降低IGBT的导通损耗。这些效果可以在同一个模块封装里带来更高的开关频率，它有效地降低了对如太阳能逆变器、UPS系统或高频电源的输出端的滤波要求。而且可实现比标准硅功率模块更高的输出功率。