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混合碳化硅功率模块

带IGBT和碳化硅肖特基二极管的功率模块

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  • SKM200GB12T4SiC2
    SEMITRANS 3 (106x62x31)
    1200
    200
    Half Bridge
    SiC Diode + IGBT 4 (Trench)
    Sample status
  • SKM200GB12F4SiC2
    SEMITRANS 3 (106x62x31)
    1200
    200
    Half Bridge
    SiC Diode + IGBT 4 fast (Trench)
    Sample status
  • SKiM459GD12F4V4
    SKIM 93 (160x150x35)
    1200
    450
    Six Pack
    SiC Diode + IGBT 4 fast (Trench)
    Sample status
  • SEMiX603GB12E4SiCp
    SEMiX 3p (150x62x17)
    1200
    600
    Half Bridge
    SiC Diode + IGBT 4 (Trench)
    Sample status
  • SKiiP25AC12F4V19
    MiniSKiiP II 2 (59x52x16)
    1200
    50
    Six Pack
    SiC Diode + IGBT 4 fast (Trench)
    Sample status
  • SKiiP38AC12F4V19
    MiniSKiiP II 3 (82x59x16)
    1200
    100
    Six Pack
    SiC Diode + IGBT 4 fast (Trench)
    Sample status
  • SKiiP39AC12F4V19
    MiniSKiiP II 3 (82x59x16)
    1200
    150
    Six Pack
    SiC Diode + IGBT 4 fast (Trench)
    Sample status
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高开关频率并且和提高了输出功率和效率

赛米控提供混合碳化硅功率模块如，MiniSKiiP, SEMITRANS, SEMiX 3 Press-Fit和SKiM63/93。将最新的IGBT技术和由领先供应商所提供的SiC（碳化硅）肖特基二极管结合在一起，以提高开关频率，同时减少功率损耗。

可提供的混合碳化硅功率模块电流为50A - 600A,电压为 1200V。涵盖三相全桥和半桥拓扑结构。

SiC（碳化硅）肖特基续流二极管所带来的开关损耗近乎为零, 同时能大大降低IGBT的导通损耗。这些效果可以在同一个模块封装里带来更高的开关频率，它有效地降低了对如太阳能逆变器、UPS系统或高频电源的输出端的滤波要求。而且可实现比标准硅功率模块更高的输出功率。