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Full Silicon Carbide Power Modules

Power modules with silicon carbide MOSFETs

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  • VDS in V
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  • SKiiP 13ACM12V17
    MiniSKiiP II 1 (42x40x16)
    1200
    25
    Six Pack
    Sample status
  • SKiiP 13ACM12V18
    MiniSKiiP II 1 (42x40x16)
    1200
    25
    Six Pack
    Sample status
  • SKiiP 26ACM12V17
    MiniSKiiP II 2 (59x52x16)
    1200
    72
    Six Pack
    Sample status
  • SKiiP 15ACM12V20
    MiniSKiiP II 1 (42x40x16)
    1200
    t.b.d.
    Six Pack
    Sample status
  • SK45MAHT12SCp
    SEMITOP 3 Press-Fit (31x55x12)
    1200
    39
    Six Pack
    In production new
  • SK45MLET12SCp
    SEMITOP 3 Press-Fit (31x55x12)
    1200
    39
    Single Switch
    Sample status
  • SK25MH120SCTp
    SEMITOP 2 Press-Fit (28x40.5x12)
    1200
    26
    H-Bridge
    Sample status
  • SK45MH120TSCp
    SEMITOP 2 Press-Fit (28x40.5x12)
    1200
    40
    H-Bridge
    Sample status
  • SK20KDD12SCp
    SEMITOP 2 Press-Fit (28x40.5x12)
    1200
    18
    H-Bridge
    Sample status
  • SK35MLLE120SCp
    SEMITOP 2 Press-Fit (28x40.5x12)
    1200
    36
    Customer Specific
    Sample status
  • SK200MB120TSCE2
    SEMITOP E2 (63x57x12)
    1200
    400
    Half Bridge
    Sample status
  • SKM500MB120SC
    SEMITRANS 3 (106x62x31)
    1200
    541
    Half Bridge
    Sample status
  • SKM350MB120SCH17
    SEMITRANS 3 (106x62x31)
    1200
    523
    Half Bridge
    Sample status
  • SKM350MB120SCH15
    SEMITRANS 3 (106x62x31)
    1200
    523
    Half Bridge
    Sample status
  • SKKE60S12
    SEMIPACK 2 (94x34x30)
    1200
    64
    Single Switch
    Sample status
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Highest Power Output and Efficiency

SEMIKRON offers full silicon carbide power modules in MiniSKiiP, SEMITOP and SEMITRANS housings. By using SiC MOSFETs of the leading suppliers highest output power and power densities are reached in combination with high switching frequencies, lowest losses and maximum efficiency.

Through the increase of switching frequency the passive filter components can be reduced drastically. Power losses are reduced at the same time which lead to smaller heat sinks and less cooling effort in general. Both benefits result in a major decrease of system cost.

The full silicon carbide power modules are available from 20A to 540A in 1200V, with and without anti-parallel free-wheeling Schottky diode.

Covered topologies are 6-packs in classic configuration but also with split output to enable a flexible adaption to your application. Further half bridges and boost converters including a bypass diode are available.