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SiC Modules – 10kW up to 350kW

Various connection technologies, wide output power range and maximum efficiency are the key features combined today in SEMIKRON silicon carbide power modules. Both, hybrid and full SiC modules, are available in seven different packages, optimised for low inductance and utilizing the unique features of each package.

Silicon Carbide Power Modules Benefits

SEMIKRON hybrid silicon carbide power modules are an simple way of achieving reduced power losses and increased switching frequencies by combining the latest IGBT technology with SiC Schottky diodes. For efficiencies higher than 99%, a minimum of power losses and maximum output power and power density, full silicon carbide modules have to be used with SiC MOSFET switches.

Thanks to the MOSFET’s body diode, an external anti-parallel diode is never required, but can be beneficial in boosting the efficiency even further. SEMIKRON supplies power modules with silicon carbide chips from leading suppliers that are tested for compliance with the well-known SEMIKRON quality and reliability standards.

Silicon Carbide Power Modules Key Features

  • Higher switching frequencies allow for optimized and lower-cost filter components
  • Reduced power losses boost efficiency and lower system costs and size thanks to the more compact cooling devices
  • Latest SiC chips of the leading suppliers
  • Various packages and connection technologies with optimised chipsets for your application
  • Standard industry packages

Silicon Carbide Power Modules Applications

Silicon carbide power modules are the perfect technology for creating system benefits, both technically and commercially. With the increase in switching frequency, far smaller filter components such as chokes in booster applications or the load-side filters in power supplies, UPS or solar inverters are needed.

Power losses are also reduced, resulting in savings when it comes to system cooling, lower fan power, smaller heatsinks or the move from a forced cooled application to a convection cooled design. Finally, a maximum of overall system efficiency is achieved, a key benefit when it comes to meeting the demands of state-of-the-art power conversion systems.

Hybrid SiC modules: 50% less power loss and easy implementation

Hybrid Silicon Carbide Power Modules combine IGBT switches with the benefits of Silicon Carbide  chottky free-wheeliing diodes: Virtually no diode switching losses and drastically reduced IGBT turn-on losses. In this combination, the module switching losses are reduced by 30%. Replacing the standard IGBT with a high-speed device would also result in lower IGBT turn-off losses. Switching losses are reduced by as much as 50%. Hybrid SiC power modules are the right choice for medium and high-power applications: easy implementation, no driver change, and limited SiC chip area usage and therefore moderate impact on the module cost.

    Full SiC modules

    Full Silicon Carbide power modules use SiC MOSFETs as the switching device and can be built with or without SiC freewheeling diode. SiC MOSFETs boast a minimum of power losses, thus delivering a maximum of efficiency and power density. The use of SiC Schottky freewheeling diodes can help improve both values. The result is a potential increase in switching frequency and efficiency at the same time. Alternatively, power density can be drastically increased. The portfolio is completed with rectifier modules for DC/DC converter applications.

    Silicon Carbide chips from leading suppliers combined with SEMIKRON packaging technology

    • Soldered or sintered chip assembly for high temperature operation and maximum reliability
    • Soldered or solder-free (spring/press-fit) PCB assembly
    • Wide power range in multiple industry standard packages
    • Power Modules optimized for low inductance
    • Modules with and without baseplate
    • Customer-specific solutions
    • Application samples and gate drivers available for easy implementation and start-up

    Silicon Carbide Power Modules Product Range

    Our products cover a power range from 10kW to 350kW in 1200V and come in seven different packages. MiniSKiiP and SEMITOP represent the low power range of up to 25kW, both without a baseplate. The MiniSKiiP comes with proved and tested SPRiNG technology as hybrid as well as a full SiC 6-pack, with or without SiC Schottky free-wheeling diodes. The industry standard packages SEMITOP E1/E2 accompanied by the first generation of SEMITOP modules help to achieve a maximum of flexibility in customization..

    The medium and high power range is covered by SEMITRANS 3, SKiM63/93 and SEMiX 3 Press-Fit, available in hybrid and full SiC topologies for up to 600A rated chip current.

    Full SiC Modules

    • Products
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    • Product Type
    • Product Line
    • VDS in V
    • ID in A
    • Switches
    • Product Status
    • MiniSKiiP II 1 (42x40x16)
      1200
      25
      Six Pack
      Sample status
    • MiniSKiiP II 1 (42x40x16)
      1200
      25
      Six Pack
      Sample status
    • MiniSKiiP II 2 (59x52x16)
      1200
      72
      Six Pack
      Sample status
    • SEMITOP 3 Press-Fit (31x55x12)
      1200
      39
      Six Pack
      Sample status
    • SEMITOP 3 Press-Fit (31x55x12)
      1200
      40
      Single Switch
      Sample status
    • SEMITOP 2 Press-Fit (28x40.5x12)
      1200
      26
      H-Bridge
      Sample status
    • SEMITOP 2 Press-Fit (28x40.5x12)
      1200
      40
      H-Bridge
      Sample status
    • SEMITOP 2 Press-Fit (28x40.5x12)
      1200
      36
      H-Bridge
      Sample status
    • SEMITOP 2 Press-Fit (28x40.5x12)
      1200
      14
      H-Bridge
      Sample status
    • SEMITOP E2 (63x57x12)
      1200
      3-level
      Sample status
    • SEMITRANS 3 (106x62x31)
      1200
      541
      Half Bridge
      Sample status
    • SEMITRANS 3 (106x62x31)
      1200
      523
      Half Bridge
      Sample status
    • SEMITRANS 3 (106x62x31)
      1200
      523
      Half Bridge
      Sample status
    • SEMIPACK 2 (94x34x30)
      1200
      80
      Single Switch
      Sample status

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    Hybrid SiC Modules

    • Products
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    • Product Type
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    • Technology
    • Product Status
    • SEMITRANS 3 (106x62x31)
      1200
      200
      Half Bridge
      SiC Diode + IGBT 4 (Trench)
      Sample status
    • SEMITRANS 3 (106x62x31)
      1200
      200
      Half Bridge
      SiC Diode + IGBT 4 fast (Trench)
      Sample status
    • SEMITRANS 3 (106x62x31)
      1200
      200
      Half Bridge
      SiC Diode + IGBT 4 fast (Trench)
      Sample status
    • SKIM 93 (160x150x35)
      1200
      450
      Six Pack
      SiC Diode + IGBT 4 fast (Trench)
      Sample status
    • SEMiX 3p (150x62x17)
      1200
      600
      Half Bridge
      SiC Diode + IGBT 4 (Trench)
      Sample status
    • MiniSKiiP II 2 (59x52x16)
      1200
      50
      Six Pack
      SiC Diode + IGBT 4 fast (Trench)
      Sample status
    • MiniSKiiP II 3 (82x59x16)
      1200
      100
      Six Pack
      SiC Diode + IGBT 4 fast (Trench)
      Sample status
    • MiniSKiiP II 3 (82x59x16)
      1200
      150
      Six Pack
      SiC Diode + IGBT 4 fast (Trench)
      Sample status
    • SEMITOP 2 (41x28x12)
      1200
      25
      Single Switch
      IGBT 4 Fast (Trench)
      Sample status

    Sorry, we were unable to find products that match your current set of filters and/or search.