Direct Pressed Die (DPD)

Pushing Standards to New Limits

Higher Performance in Compact Design

As an evolution of the Double Sided Sintering Technology (DSS), SEMIKRON presented in 2016 the Direct Pressed Die Technology (DPD). In addition to sintering the chip to the DBC and the flex layer to the chip within DSS, the DPD technology uses a pressure element that applies a pressure force directly to the top of the die. This generates an optimized thermal connection to the cooler where it is actually needed: right underneath the chip.

There is no fixed connection between DBC and heatsink, which provides great flexibility on the cooling selection. A DPD based power module can flexibly be mounted on convection or forced cooled heatsinks as well as water coolers. The minimized layer of thermal paste creates superb thermal conductivity, leading to excellent power density.

The DPD technology can also be integrated into standard baseplate or baseplate-less packages as well as in high performance power modules. Thanks to the flexible and non-rigid connection, mechanical stress is minimized and, with this, the thermal and power cycling capability reaches new benchmarks. Electrically the DPD technology features a low stray inductance design that allows for the integration of the latest wide bandgap chip technologies for extremely fast switching.

The DPD Technology enables a higher power density with a longer service life compared to traditional solder-based assembly and connection technologies. It thus opens up new system solutions for the ever increasing demands on power electronics in applications like traction inverters in e-mobility.

Direct Pressed Die – Key Features and Benefits

  • Highly reliable sinter connections replacing solder and wire bonding
  • High thermal conductivity from chip to cooler
  • High power density
  • High power cycling reliability
  • Long service life
  • High surge currents thanks to big contact area of the die interconnect
  • Low inductance design
  • Perfect for wide bandgap devices (e.g. Silicon Carbide)