Application Manual Power Semiconductors
Today, IGBT and power MOSFET modules are instrumental in power electronic systems and are increasingly gaining ground in new fields. This goes hand in hand with the ever increasing need for rectifier diodes and thyristors as cost-efficient means of connecting to the power supply grid. This application manual is intended to assist users with component selection and application.
465 pages of comprehensive power semiconductor knowledge
This manual contains basic explanations and background information on semiconductor physics where needed to provide a better understanding of the application possibilities and limits. A larger section of the manual contains descriptions of different packaging technologies, examining the different impacts on module properties and ratings in field applications. This section is rounded off with statements on component reliability and service life, as well as the relevant test procedures.
The manual also explains the structure of data sheets and provides useful tips on how to interpret data sheet specifications. An important focus of the manual is the examination of application-specific aspects which must be taken into account in component selection and application. This includes, for example, electric circuits for the most important operating scenarios, driver technology and component protection, thermal dimensioning and heat sink solutions, notes on parallel and series circuits, notes on optimum power layouts with regard to parasitic elements, as well as requirements associated with certain ambient conditions.
This book is written for users and provides help with component selection and design-in work.
From the preface
Since the first Application Manual for IGBT and MOSFET power modules was published, these components have found their way into a whole host of new applications, mainly driven by the growing need for the efficient use of fossil fuels, the reduction of environmental impact and the resultant increased use of regenerative sources of energy. General development trends (space requirements, costs, and energy efficiency) and the advancement into new fields of application (e.g. decentralised applications under harsh conditions) bring about new, stricter requirements which devices featuring state-of-the-art power semiconductors have to live up to. For this reason, this manual looks more closely than its predecessor at aspects pertaining to power semiconductor application and also deals with rectifier diodes and thyristors, which were last detailed in a SEMIKRON manual over 30 years ago.
This manual is aimed primarily at users and is intended to consolidate experience which up till now has been contained in numerous separate articles and papers. For reasons of clarity and where deemed necessary, theoretical background is gone into briefly in order to provide a better understanding of the subject matter. A deeper theoretical insight is provided in various highly-recommendable textbooks, some of which have been cited in the bibliography to this manual.
SEMIKRON's wealth of experience and expertise has gone into this advanced application manual which deals with power modules based on IGBT, MOSFET and adapted diodes, as well as rectifier diodes and thyristors in module or discrete component form from the point of view of the user. Taking the properties of these components as a basis, the manual provides tips on how to use and interpret data sheets, as well as application notes on areas such as cooling, power layout, driver technology, protection, parallel and series connection, and the use of transistor modules in soft switching applications.